DDR内存参数

DDR2 SDRAM DIMM 240 pinDDR: Double Data RateDIMM: Dual Inline Memory ModuleSDRAM: Synchronous Dynamic Random Access Memory, Synchronous to Positive Clock Edge.PIN CONFIGURATIONS (Front side / back side)

下面介绍一下DDR内存参数，pin介绍，不过是e文的，哪位好心人翻译一下咯

Front								Back
Pin	Symbol	Pin	Symbol	Pin	Symbol	Pin	Symbol	Pin	Symbol	Pin	Symbol	Pin	Symbol	Pin	Symbol
1	VREF	31	DQ19	61	A4	91	VSS	121	VSS	151	VSS	181	VDDQ	211	DM5/DQS14
2	VSS	32	VSS	62	VDDQ	92	DQS5#	122	DQ4	152	DQ28	182	A3	212	NC/DQS14#
3	DQ0	33	DQ24	63	A2	93	DQS5	123	DQ5	153	DQ29	183	A1	213	VSS
4	DQ1	34	DQ25	64	VDD	94	VSS	124	VSS	154	VSS	184	VDD	214	DQ46
5	VSS	35	VSS	65	VSS	95	DQ42	125	DM0/DQS9	155	DM3/DQS12	185	CK0	215	DQ47
6	DQS0#	36	DQS3#	66	VSS	96	DQ43	126	NC/DQS9#	156	NC/DQS12#	186	CK0#	216	VSS
7	DQS0	37	DQS3	67	VDD	97	VSS	127	VSS	157	VSS	187	VDD	217	DQ52
8	VSS	38	VSS	68	PAR_IN	98	DQ48	128	DQ6	158	DQ30	188	A0	218	DQ53
9	DQ2	39	DQ26	69	VDD	99	DQ49	129	DQ7	159	DQ31	189	VDD	219	VSS
10	DQ3	40	DQ27	70	A10/AP	100	VSS	130	VSS	160	VSS	190	BA1	220	RFU
11	VSS	41	VSS	71	BA0	101	SA2	131	DQ12	161	CB4	191	VDDQ	221	RFU
12	DQ8	42	CB0	72	VDDQ	102	NC	132	DQ13	162	CB5	192	RAS#	222	VSS
13	DQ9	43	CB1	73	WE#	103	VSS	133	VSS	163	VSS	193	S0#	223	DM6/DQS15
14	VSS	44	VSS	74	CAS#	104	DQS6#	134	DM1/DQS10	164	DM8/DQS17	194	VDDQ	224	NC/DQS15#
15	DQS1#	45	DQS8#	75	VDDQ	105	DQS6	135	NC/DQS10#	165	NC/DQS17#	195	ODT0	225	VSS
16	DQS1	46	DQS8	76	S1#	106	VSS	136	VSS	166	VSS	196	NC/A13	226	DQ54
17	VSS	47	VSS	77	0DT1	107	DQ50	137	RFU	167	CB6	197	VDD	227	DQ55
18	RESET#	48	CB2	78	VDDQ	108	DQ51	138	RFU	168	CB7	198	VSS	228	VSS
19	NC	49	CB3	79	VSS	109	VSS	139	VSS	169	VSS	199	DQ36	229	DQ60
20	VSS	50	VSS	80	DQ32	110	DQ56	140	DQ14	170	VDDQ	200	DQ37	230	DQ61
21	DQ10	51	VDDQ	81	DQ33	111	DQ57	141	DQ15	171	CKE1	201	VSS	231	VSS
22	DQ11	52	CKE0	82	VSS	112	VSS	142	VSS	172	VDD	202	DM4/DQS13	232	DM7/DQS16
23	VSS	53	VDD	83	DQS4#	113	DQS7#	143	DQ20	173	NC	203	NC/DQS13#	233	NC/DQS16#
24	DQ16	54	NC/BA2	84	DQS4	114	DQS7	144	DQ21	174	NC	204	VSS	234	VSS
25	DQ17	55	ERR_OUT	85	VSS	115	VSS	145	VSS	175	VDDQ	205	DQ38	235	DQ62
26	VSS	56	VDDQ	86	DQ34	116	DQ58	146	DM2/DQS11	176	A12	206	DQ39	236	DQ63
27	DQS2#	57	A11	87	DQ35	117	DQ59	147	NC/DQS11#	177	A9	207	VSS	237	VSS
28	DQS2	58	A7	88	VSS	118	VSS	148	VSS	178	VDD	208	DQ44	238	VDDSPD
29	VSS	59	VDD	89	DQ40	119	SDA	149	DQ22	179	A8	209	DQ45	239	SA0
30	DQ18	60	A5	90	DQ41	120	SCL	150	DQ23	180	A6	210	VSS	240	SA1

Note: Pin 196 is NC for 512MB, or A13 for 1GB and 2GB; pin 54 is NC for 512MB and 1GB, or BA2 for 2GB.

Pin Descriptions

Pin numbers may not correlate with symbols; refer to Pin Assignment table above for more information.

Pin Numbers	Symbol	Type	Description
195	ODT0	Input	On-Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When enabled, ODT is only applied to each of the following pins: DQ, DQS, DQS#, RDQS, RDQS#, CB, and DM. The ODT input will be ignored if disabled via the LOAD MODE command.
185, 186	CK0, CK0#	Input	Clock: CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK#. Output data (DQs and DQS/DQS#) is referenced to the crossings of CK and CK#.
52	CKE0	Input	Clock Enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates clocking circuitry on the DDR2 SDRAM. The specific circuitry that is enabled/disabled is dependent on the DDR2 SDRAM configuration and operating mode. CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all device banks idle), or ACTIVE POWERDOWN (row ACTIVE in any device bank). CKE is synchronous for POWER-DOWN entry, POWER-DOWN exit, output disable, and for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit. Input buffers (excluding CK, CK#, CKE, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE) are disabled during SELF REFRESH. CKE is an SSTL_18 input but will detect a LVCMOS LOW level once VDD is applied during first power-up. After Vref has become stable during the power on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh operation VREF must be maintained to this input.
193	S0#	Input	Chip Select: S# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when S# is registered HIGH. S# provides for external rank selection on systems with multiple ranks. S# is considered part of the command code.
73, 74, 192	RAS#, CAS#, WE#	Input	Command Inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered.
54 (2GB), 71, 190	BA0, BA1, BA2 (2GB)	Input	Bank Address Inputs: BA0–BA1/BA2 define to which device bank an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA0–BA1 define which mode register including MR, EMR, EMR(2), and EMR(3) is loaded during the LOAD MODE command.
57, 58, 60, 61, 63, 70, 176, 177, 179, 180, 182, 183, 188, 196 (1GB, 2GB)	A0–A12 (512MB) A0–A13 (1GB, 2GB)	Input	Address Inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for Read/ Write commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank selected by BA0–BA1/BA2) or all device banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command.
3, 4, 9, 10, 12, 13, 21, 22, 24, 25, 30, 31, 33, 34, 39, 40, 80, 81, 86, 87, 89, 90, 95, 96, 98, 99, 107, 108, 110, 111, 116, 117, 122, 123, 128, 129, 131, 132, 140, 141, 143, 144, 149, 150, 152, 153, 158, 159, 199, 200, 205, 206, 208, 209, 214, 215, 217, 218, 226, 227, 229, 230, 235, 236	DQ0–DQ63	I/O	Data Input/Output: Bidirectional data bus.
6, 7, 15, 16, 27, 28, 36, 37, 45, 46, 83, 84, 92, 93, 104, 105, 113, 114, 126, 135, 147, 156, 165, 203, 212, 224, 233 125, 134, 146, 155, 164, 202, 211, 223, 232	DQS0–DQS8, DQS0#– DQS17#, DM0–DM8 (DQS9– DQS17)	I/O	Data Strobe: Output with read data, input with write data for source synchronous operation. Edge-aligned with read data, center aligned with write data. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input-only, the DM loading is designed to match that of DQ and DQS pins. If RDQS is disabled, DQS0–DQS17 become DM0–DM8 and DQS9#–DQS17# are not used.
42, 43, 48, 49, 161, 162, 167, 168	CB0–CB7	I/O	Check Bits.
68	PAR_IN	Input	Parity bit for the address and control bus.
55	ERR_OUT	Output	Parity error found on the address and control bus.
120	SCL	Input	Serial Clock for Presence-Detect: SCL is used to synchronize the presence-detect data transfer to and from the module.
101, 239, 240	SA0–SA2	Input	Presence-Detect Address Inputs: These pins are used to configure the presence-detect device.
119	SDA	I/O	Serial Presence-Detect Data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module.
18	RESET#	Input	Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can be used during power up to ensure that CKE is LOW and DQs are High-Z.
53, 59, 64, 67, 69, 172, 178, 184, 187, 189, 197,	VDD	Supply	Power Supply: 1.8V ±0.1V.
51, 56, 62, 72, 75, 78, 170, 175, 181, 191, 194,	VDDQ	Supply	DQ Power Supply: 1.8V ±0.1V.
1	VREF	Supply	SSTL_18 reference voltage.
2, 5, 8, 11, 14, 17, 20, 23, 26, 29, 32, 35, 38, 41, 44, 47, 50, 65, 66, 79, 82, 85, 88, 91, 94, 97,100, 103, 106, 109,112, 115, 118, 121, 124, 127, 130, 133, 136, 139, 142, 145, 148, 151, 154, 157, 160, 163, 166, 169, 198, 201, 204, 207, 210, 213, 216, 219, 222, 225, 228, 231, 234, 237	VSS	Supply	Ground.
238	VDDSPD	Supply	Serial EEPROM positive power supply: +1.7V to +3.6V.
19, 54 (512MB, 1GB), 76, 77, 102, 171, 196 (512MB), 173, 174,	NC	—	No Connect: These pins should be left unconnected.
137, 138, 220, 221	RFU	—	Reserved for future use.